Processing system, processing method and mounting member

ABSTRACT

A target for processing (W) is placed on a placing member ( 21 ) that is in a chamber ( 12 ). The placing member ( 21 ) comprises a resistive layer ( 25 ). A power source ( 28 ) forms a magnetic field around an induction coil ( 27 ) by passing a current through the induction coil ( 27 ) that is provided on the out side of the chamber ( 12 ). The resistive layer ( 25 ) is heated by induction heating that occurs by the formed magnetic field, and heats the target for processing (W) that is placed on the placing member ( 21 ).

TECHNICAL FIELD

The present invention relates to a processing device, processing method,and placing member, for heating a target for processing, such as asemiconductor wafer, etc., to a predetermined temperature, andprocessing the target for processing.

BACKGROUND ART

In the manufacturing process of semiconductor devices and liquid crystaldisplay devices, etc., processing for forming predetermined kinds offilms on substrates, such as semiconductor wafers, etc., are carriedout. As the integration of a circuit that is formed on a substratebecomes high, or as the circuit that is formed on a substrate scalesdown, or as the film formed on a substrate becomes thinner, advancementof the film that is formed, becomes a large problem.

As a method for forming high quality films, the ALD (Atomic LayerDeposition) method is developed.

In a case of forming a predetermined kind of film, source gas isprovided to a forming surface, where the film is to be formed. Moleculesof the source gas attach to the forming surface in many layers. The ALDmethod applies the difference of the adsorption energy that the firstmolecular layer has towards the forming surface, with the adsorptionenergy that the molecular layers after the second layer has towards theforming surface. By this difference of adsorption energy, forming of afilm at a molecule level (or an atomic level) is controlled.

Concretely, by controlling the temperature and pressure at the time offilm forming, i.e., by repeating the rise and fall of temperature andpressure, unnecessary molecular layers after the second layer, (sourcegas) are eliminated. By this, a plurality of molecular layers thatconstitute the desired film, is stacked layer by layer on the formingsurface.

Below, the ALD method will be described. Below, an example wheretitanium nitride (TiN) film is formed applying titanium tetrachloride(TiCl₄) and ammonia (NH₃), will be described.

FIG. 12 shows a structure example of a processing device that carriesout the above ALD method.

A processing device 101 comprises for example, an approximatelycylindrical aluminum chamber 102. The diameter of the under part of thechamber 12 is formed smaller than the diameter of the upper part, and onthe side wall of the chamber 102, a nozzle 103 is provided. Processinggas for forming a film is provided to the interior of the chamber 102via the nozzle 103.

On the lower side wall of the chamber 102, an exhaust device 105 isconnected via an exhaust pipe 104. The exhaust device 105 exhausts thegas in the chamber 102.

At the base of the chamber 102, there is provided a cylindrical hollowshaft 106 standing up, such as disclosed in the Unexamined JapanesePatent Application KOKAI Publication No. H7-78766, and the UnexaminedJapanese Patent Application KOKAI Publication No. H7-153706. The shaft106 penetrates the base of the chamber 102. The junction of the chamber102 and the shaft 106 is sealed by a sealing member 107, such as anO-ring, to retain airtightness in the chamber 102.

On the top part of the shaft 106, a disk form placing table 108 forplacing a wafer is fixed. The placing table 108 includes a heater 109,constituted of a metal resistive element that has a predeterminedpattern, such as tungsten. The shaft 106 is constituted of the samematerial as the placing table 108, such as for example, aluminumnitride, and is connected to the placing table 108 by a solid statebonding 110. By this, the interior space of the shaft 106 can beretained at a different atmosphere from the interior space of thechamber 102. The interior space of the shaft 106 is retained by airatmosphere.

The heater 109 is connected to an electric supply line 113 that goesthrough the interior of the shaft 106, and is provided electric powervia the electric supply line 113. As described above, the interior ofthe shaft 106 is air atmosphere. By this, enough heat liberation of thesupply line 113 is carried out, and burn out of the supply line 113 isprevented. Additionally, corrosion of the supply line 113 by processinggas that is provided to the interior of the chamber 102, is prevented.

The shaft 106 has a function that escapes the heat of the placing table108 that is heated by the heater 109. Namely, the heat of the placingtable 108 goes through the shaft 106, and escapes to the base of thechamber 102. There is provided a cooling jacket 112 at the base of thechamber 102, wherein coolant water flows, as disclosed in the UnexaminedJapanese Patent Application KOKAI Publication No. H6-244143. The heat ofthe shaft 106 is absorbed by the coolant water that flows in the coolingjacket 112.

Next, a process for forming a TiN film by the ALD method, applying theabove processing device 101, will be described.

First, the heating table 108 is heated to an adequate temperature, forexample 450° C., for the attachment of TiCl₄. Then, TiCl₄ gas is fed fora short time, for example a few seconds, to the interior of the chamber102. By this, many layers of TiCl₄ molecular layers are attached to thesurface of the wafer.

Next, to purge TiCl₄ gas, an inactive gas, for example argon gas, isprovided to the interior of the chamber 102, and the interior of thechamber 102 is set to a high vacuum of for example 1.33×10⁻³ Pa (10⁻⁵Torr). At this time, the temperature of the placing table 108 is set toa temperature adequate for the attachment of NH₃, for example 300° C. Bythis, the TiCl₄ molecule layers that are attached to the surface of thewafer, scatter by the aforementioned difference of adsorption energy,leaving a first layer of molecular layers. As a result, a situationwhere one layer of TiCl₄ molecular layer is attached to the surface ofthe wafer is gained.

Next, the NH₃ gas is fed to the interior of the chamber 102, for a shorttime, for example for a few seconds. By feeding the gas, the pressure inthe chamber 102 returns to for example 133 Pa (1 Torr). By this, theTiCl₄ molecules on the surface of the wafer, and the NH₃ gas react, andone layer of TiN molecular layer is formed. Many layers of NH₃ molecularlayers are attached to the formed TiN molecular layer.

Next, to purge NH₃ gas, argon gas is once again fed to the interior ofthe chamber 102, and the pressure in the chamber 102 is set toapproximately 1.33×10⁻³ Pa. At this time, the placing table 108 is setto for example 450° C. By this, the NH₃ molecular layers of the secondlayer and more are dispersed, i.e. excluding the NH₃ molecular layer ofthe first layer that is attached to the TiN molecular layer.

Next, TiCl₄ gas is fed to the interior of the chamber 102, for a fewseconds. At this time, the NH₃ molecules on the TiN layer react to theTiCl₄ gas, and one layer of TiN molecular layer is formed. Therefore, atthis point, two layers of TiN molecular layers are formed on the surfaceof the wafer. Many layers of TiCl₄ molecular layers are attached to theformed second layer of TiN molecular layer.

Subsequently, the same operation as the above, namely, the providing ofeach source gas, and the purging by inactive gas are repeatedpredetermined times. By this, the TiN molecular layer is stacked layerby layer, and a TiN film with the requested thickness can be gained. Theabove operation is repeated for example a hundred to several hundreds oftimes.

As the above, according to the ALD method, because a plurality ofmolecular layers that constitute a film can be formed layer by layer,the film thickness can be controlled with high precision. Furthermore, afilm of a high quality can be gained. Additionally, by changing the filmquality of each molecular layer little by little, it is possible toprovide a gradient to the attribute of the entire film.

However, the above processing device 101 has the problems of below.

First, the placing table 108 that includes the heater 109 ismanufactured by sintering ceramics such as aluminum nitride thatincludes metal resistive elements. However, because the yielding rate bythis manufacturing method is low, the placing table 108 is expensive.

Additionally, it is necessary to form a penetrating hole in the chamber102, and place the shaft 106, to draw the electric supply line 113 thatis connected to the heater 109, outside of the chamber 102. Therefore,the structure of the processing device 101 is complicated.

Furthermore, the sealing member 107 that seals the connection of thechamber 102 and the shaft 106, is ordinarily constituted of resinmaterial. In this case, to avoid damage of the sealing member 107 byheat, it is necessary to make the length L1 of the shaft 106 thatfunctions as a heat liberation member, longer. Namely, the length L1 ofthe shaft 106 is set so that the temperature of the part of the shaft106 that contacts the sealing member 107 is equal to, or lower than theheat resistant temperature of the resin material that is applied to thesealing member 107.

If the length L1 of the shaft 106 is long, the capacity of the chamber102 also becomes larger. Therefore, the exhaustion efficiency in thechamber 102 is low, and a long time is necessary to change theatmosphere in the chamber 102. Namely, by the ALD method that oftencarries out the changing of atmosphere, a high throughput can not begained. Furthermore, because the consumption amount of processing gas islarge, the manufacturing cost of a semiconductor device and a liquidcrystal display device, etc., is high.

As the above, in the conventional processing device 101, there areproblems that the manufacturing yielding rate of the placing table 108is low, and that the structure of the processing device 101 iscomplicated. Additionally, there are problems that the capacity of thechamber 102 that constitutes the conventional processing device 101 islarge, and therefore reduction of the manufacturing cost and improvementof throughput is not enough.

Considering the above, an object of the present invention is to providea processing device that has a simple structure. Another object of thepresent invention is to provide a placing member where a high yieldingrate can be realized. Still another object of the present invention isto provide a processing device and processing method, in which a lowmanufacturing cost can be realized. Yet another object of the presentinvention is to provide a processing device and processing method, inwhich a high throughput can be realized.

DISCLOSURE OF INVENTION

To achieve the above objects, a processing device according to a firstaspect of the present invention is characterized by comprising:

-   -   a chamber (12), where a predetermined processing of a target for        processing (W) is carried out in the interior;    -   a placing member (21) that is placed in the chamber (12), and        the target for processing (W) is placed thereon;    -   an induction coil (27) that is provided on the out side of the        chamber (12); and    -   a power source (28) that forms a magnetic field around the        induction coil (27) by passing a current through the induction        coil (27);    -   wherein the placing member (21) has a resistive layer (25) that        is heated by induction heating that occurs by the magnetic field        formed around the induction coil (27), and heats the target for        processing (W), which is placed on the placing member (21).

The processing device may further comprise a reflection film (31) thatis provided on an inner surface the chamber (12) and may reflectradiation heat from the resistive layer (25). The placing member (21)may further comprise a heat insulation layer (26) that may be stacked onthe resistive layer (25), and may prevent diffusion of heat generated bythe resistive layer (25).

The placing member (21) may further comprise a reflection film (31) thatmay be provided on the resistive layer (25) and may reflect radiationheat from the resistive layer (25).

The reflection film (31) may be provided in between the resistive layer(25) and the heat insulation layer (26).

The reflection film (31) may be provided on a side face of the resistivelayer (25).

The processing device may further comprise a flow path (20) that isplaced in between the induction coil (27) and the placing member (21),wherein a cooling medium that absorbs heat from the placing member (21)flows.

The placing member (21) may further comprise an insulation layer (24)that may be stacked on the resistive layer (25) and may constitute asurface for placing the target for processing (W).

The processing device may further comprise a fixing member (22) thatfixes the placing member (21) to the interior of the chamber (12).

The processing device may further comprise a gas providing device (29)that provides a plurality of kinds of gas in a predetermined order tothe interior of the chamber (12).

The processing device may further comprise a carrier chamber (17) thatis connected to the chamber (12), wherein the carrier chamber (17) maycomprise a carrier mechanism (18) that transfers the placing member(21), in which the target for processing (W) is placed, to the interiorof the chamber (12).

The processing device may further comprise a support member (30) thatsupports the placing member (21), where the target for processing (W) isplaced, in a state apart from an inner surface of the chamber (12).

A processing device according to a second aspect of the presentinvention is characterized by comprising:

-   -   a chamber (12), where a predetermined processing of a target for        processing (W) is carried out in the interior;    -   a retaining member (32) that is provided in the interior of the        chamber (12), and retains a plurality of placing members (21),        in which the targets for processing (W) are placed;    -   a carrier mechanism (18) that transfers the plurality of placing        members (21), in which the targets for processing (W) are        placed, and sets them at the retaining member;    -   an induction coil (27) that is provided on the out side of the        chamber (12); and    -   a power source (28) that forms a magnetic field around the        induction coil (27) by passing a current through the induction        coil (27);    -   wherein each of the plurality of placing members (21) has a        resistive layer (25) that is heated by induction heating that        occurs by the magnetic field formed around the induction coil        (27) and heats the target for processing (W), which is placed on        the placing member (21).

A placing member according to a third aspect of the present invention ischaracterized by comprising an insulation layer (24) and a resistivelayer (25) that is stacked on the insulation layer (24), heated byinduction heating, and heats a target for processing (W), placed on theinsulation (24).

The resistive layer (25) may be formed by melting and sprayingconductive material on the insulation layer (24).

The placing member may further comprise a heat insulation layer (26)that may be stacked on the surface, opposite to the surface thatcontacts the insulation layer (24) of the resistive layer (25), and mayprevent diffusion of heat, generated by the resistive layer (25).

The placing member may further comprise a reflection film (31) that maybe placed on the resistive layer (25) and may reflect radiation heatfrom the resistive layer (25).

A processing method according to a fourth aspect of the presentinvention is characterized by carrying out a predetermined step of atarget for processing (W) that is placed in the interior of a chamber(12), and by comprising:

-   -   a step of placing the target for processing (W) to one surface        of an insulation layer (24) that is placed in the chamber (12),        wherein a resistive layer (25) is stacked to the other surface        of the insulation layer (24);    -   a step of heating the resistive layer (25), which is in the        chamber (12), by induction heating that occurs by passing a        current through an induction coil (27) that is provided out side        of the chamber (12), thereby heating the target for processing        (W), which is placed on the insulation layer (24).

The processing method may further comprise a step of alternatelyproviding a plurality of kinds of gas to the interior of the chamber(12).

The processing method may further comprise a step of changing atemperature of the target for processing (W) by changing the amplitudeof the current that is passed through the induction coil (27).

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram showing the structure of a processing deviceaccording to the first embodiment of the present invention.

FIG. 2 is a diagram showing a timing chart of the performance of theprocessing device.

FIG. 3 is a diagram showing the structure of a processing deviceaccording to the second embodiment of the present invention.

FIG. 4 is a diagram showing the structure of a processing deviceaccording to another embodiment of the present invention.

FIG. 5 is a diagram showing the structure of a processing deviceaccording to another embodiment of the present invention.

FIG. 6 is a diagram showing the structure of a processing deviceaccording to another embodiment of the present invention.

FIG. 7 is a diagram showing the structure of a processing deviceaccording to another embodiment of the present invention.

FIGS. 8A to 8C are diagrams showing the forming position of thereflection film placed in the processing device.

FIG. 9 is a diagram showing the structure of a processing deviceaccording to another embodiment of the present invention.

FIG. 10 is a diagram showing the structure of a processing deviceaccording to another embodiment of the present invention.

FIG. 11 is a diagram showing a placing example of exhaust pipes thatconstitute the processing device.

FIG. 12 is a diagram showing the structure of a conventional processingdevice.

BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment)

Below, a processing device according to the first embodiment of thepresent invention will be described with reference to the drawings.

In the first embodiment, an embodiment where the present invention isapplied to a processing device that forms a TiN film on a semiconductorwafer (herein after referred to as: wafer W), by an ALD (Atomic LayerDeposition) method will be described.

FIG. 1 shows the structure of a processing device 11 according to thefirst embodiment.

The processing device 11 comprises an approximately cylindrical chamber12. The chamber 12 is comprised of materials that do not have magnetism;for example, inorganic material such as ceramic, nonmagnetic metal suchas aluminum and stainless steel, or resin material such asfiber-reinforced plastic.

The approximately center of the base of the chamber 12 sticks out, andforms a stage portion 12 a, wherein the upper surface thereof isapproximately flat. By this, as shown in FIG. 1, an annular groove thatsurrounds the sticking out stage portion 12 a is formed below thechamber 12. Looking from the outside of the chamber 12, a depression isformed at approximately the center of the base of the chamber 12.

On the lower side wall of the chamber 12, an exhaust device 14 isconnected via an exhaust pipe 13. The exhaust device 14 is constitutedof a turbo-molecular pump, dry pump, etc., and exhausts gas in thechamber 12.

On the other hand, on the upper side wall of the chamber 12, a gate 15is provided. The gate 15 is connected to a carrier chamber 17 that isnext to the chamber 12, through a gate valve 16. The airtight in thechamber 12 is retained by closing the gate valve 16.

The carrier chamber 17 is provided as a port to transfer in and transferout wafers W to the chamber 12. A carrier mechanism 18 that isconstituted of carrier arms, etc., is placed in the carrier chamber 17.The carrier mechanism 18 transfers in the wafers W to the chamber 12,and also transfers out the wafers W from the chamber 12.

On the upper side wall of the chamber 12, a processing gas providingdevice 29 is connected through a nozzle 19 made of quartz, etc. Theprocessing gas providing device 29 provides processing gas, which isused in the later described film forming processing, to the interior ofthe chamber 12. As will be later described, the processing gas aretitanium tetrachloride (TiCl₄), ammonia (NH₃), and argon (Ar). Ashowerhead may be applied instead of the nozzle 19, and the nozzle 19may be plurally provided according to the kind of gas.

In the stage portion 12 a of the chamber 12, a cooling jacket 20 isprovided. The cooling jacket 20 is comprised of a passage where acooling medium, such as coolant, etc., flows. A cooling medium that isadjusted to a predetermined temperature flows through the cooling jacket20.

On the stage portion 12 a of the chamber 12, a susceptor 21 that isformed in a disk form is provided. The susceptor 21 is a member forplacing a wafer that is a target for processing, and has a function toheat the placed wafer W. The susceptor 21 is fixed to the stage portion12 a at the rim parts thereof by clamp members 22 that are fixed to thestage portion 12 a by screws, etc.

A plurality of lift pin holes 23, for example three lift pin holes 23are formed penetrating the stage portion 12 a and the susceptor 21. Inthe lift pin holes 23, lift pins (not shown in the drawings), areinserted, and the interior of the lift pin holes are structured so thatthe lift pin moves up and down.

In a case where the wafer W is transferred in to the chamber 12 by thecarrier mechanism 18, and in a case where the wafer W is transferred outof the chamber 12, the lift pin moves up. The wafer W that istransferred in is placed on the susceptor 21 by the lift pin movingdown.

The susceptor 21 is constituted of an insulation layer 24, a resistivelayer 25, and a heat insulation layer 26.

The insulation layer 24 is formed by sintering ceramic material, such asaluminum nitride, silicon nitride, or silicon carbide. One surface ofthe insulation layer 24 is flat, and structures the surface of thesusceptor 21 (the surface for placing the wafer W).

The resistive layer 25 is stacked on the other surface of the insulationlayer 24. The resistive layer 25 is constituted by conductive materialwith a comparatively high resistance, for example, pure metal such astungsten, molybdenum, nickel, tantalum or platinum, alloyed metal suchas nickel chrome alloy or iron chrome alloy, ceramic such as siliconcarbide or nitride boride, or carbon such as graphite, etc. In a casewhere dry cleaning applying halogen gas such as chlorine and fluorine iscarried out in the chamber 12, it is preferable to apply materials thathave tolerance to halogen radicals.

The resistive layer 25 is formed by for example melting and spraying theaforementioned conductive material to the insulation layer 24. Theresistive layer 25, as will be described later on, generates heat byelectromagnetic induction, and heats the wafer W that is placed on theinsulation layer 24.

The heat insulation layer 26 is stacked on the resistive layer 25. Theheat insulation layer 26 is constituted by low heat conductancematerial, such as foamed quartz or porous alumina. The heat insulationlayer 26 is formed for example, by melting and spraying these materialto the resistive layer 25. The heat insulation layer 26 constitutes theback side of the susceptor 21. The susceptor 21 is placed so that theheat insulation layer 26 contacts the stage portion 12 a of the chamber12. The heat insulation layer 26 represses the heat conductance from thesusceptor 21 to the chamber 12.

On the outside of the chamber 12, an induction coil 27, formed in aspiral, is provided adjacent to the stage portion 12 a of the chamber12. The induction coil 27 is evenly placed so that it is approximatelyparallel to the resistive layer 25. As will be later described, theresistive layer 25 generates heat by a magnetic field generated by theinduction coil 27, and as a result, the wafer W on the susceptor 21 isheated.

The induction coil 27 is connected to an alternator 28. When a currentpasses through the induction coil 27, a magnetic field is formed aroundthe induction coil 27. By the formed magnetic field, the resistive layer25 is heated. Concretely, by the formed magnetic field, an eddy currentoccurs in the resistive layer 25. When a current passes through theresistive layer 25, the resistive layer generates heat based on anelectric resistance that the resistive layer 25 has. By this, the entiresusceptor 21 is heated, and the wafer W on the susceptor 21 is heated.

The alternator 28 applies to the induction coil 27, high frequency powerof for example a frequency of a few dozen Hz to 400 Hz, and a power of500 W to 1500 W. The temperature of the resistive layer 25 is controlledby changing the frequency and/or power of the electric power that isapplied, i.e., is controlled by changing the amplitude of the currentthat is to be passed through the induction coil 27.

Here, the cooling jacket 20 absorbs the heat that transmits from thesusceptor 21 to the chamber 12, and maintains the temperature of thechamber 12 approximately constant.

The processing device 11 comprises a control device 40 that isconstituted by a micro computer. The control device 40 stores programsand data for forming a TiN film on the wafer W. The control device 40controls the entire operation of the processing device 11, according tothe stored programs, and forms a TiN film on the wafer W. Concretely,the control device 40 controls the exhaust device 14, the carriermechanism 18, the alternator 28, and the processing gas providing device29, and carries out conveyance of wafers W, control of the pressure inthe chamber 12, heating of the wafers W, and providing of processinggas, etc.

As the above, by heating the resistive layer 25 by induction heating, itis not necessary to draw in wirings for passing currents through theresistive layer 25 to the interior of the chamber 12. In other words, itis not necessary to provide a hollow shaft for drawing in the wirings,and seal members that are correspondingly necessary. Therefore, it isnot necessary to consider the heat-resistant temperature of the sealingmembers, and the susceptor 21 can be placed near the chamber 12. As aresult, a chamber 12 with a small capacity is realized.

Furthermore, because the capacity of the chamber 12 is small, the amountof consumption of processing gas is reduced. By this, low productioncost can be realized.

Moreover, because the whole heat capacity, including the susceptor 21,is small, for there aren't any shafts, etc., the time needed to heat andcool is short. Namely, the response to the change of temperature isgood. Therefore, the temperature of the wafer W can be controlled at ahigh precision, and a processing of a high throughput and a highlyreliable processing can be carried out.

The susceptor 21 is formed by stacking the resistive layer 25 and theheat insulation layer 26 on the insulation layer 24 that is constitutedby ceramic, etc. By this, the susceptor 21 can be created far moreeasily with a high yielding rate, compared to a case where insulatingmaterial that involves resistive elements, is sintered. As a result, aninexpensive susceptor 21 can be realized.

Furthermore, induction heating has a higher heat conversion efficiencyof electric power, than by connecting wiring to the resistive elementand passing currents through. Namely, by applying induction heating, lowproduction cost and running cost can be realized.

Next, the operation of the processing device 11 that has the abovestructure will be described.

FIG. 2 is a timing chart of the operation conducted by the processingdevice 11. The operation indicated below are controlled by the controldevice 40. The operation indicated below is just an example, and as longas the same result is gained, can be any kind of operation.

First, the carrier mechanism 18 transfers in the wafer W that is aprocessing target to the interior of chamber 12, and places it on a liftpin (not shown). The transferred in wafer W is placed on the suscpetor21, by the lift pin moving down.

When the wafer W is placed on the susceptor 21, the alternator 28applies high frequency power of a predetermined frequency andpredetermined power to the induction coil 27. By this, a current passesthrough the induction coil 27, and a magnetic filed is formed around theinduction coil 27. The resistive layer 25 of the susceptor 21 is heatedby the formed magnetic field, and heats the wafer W placed on thesusceptor 21 to a temperature that is adequate to the adhesion of TiCl₄,for example to 450° C. (Time T0).

Subsequently, the processing gas providing device 29 feeds TiCl₄ gas tothe interior of the chamber 12 through the nozzle 19 for a short time,for example, a few seconds, concretely for 5 to 10 seconds. Here, ifnecessary, the TiCl₄ gas may be fed together with carrier gas. By this,many layers of TiCl₄ molecular layers are attached to the surface of thewafer W (Time T1 to T2).

Next, to purge TiCl₄ gas, the processing gas providing device 29provides Ar gas to the interior of the chamber 12. Then, the exhaustdevice 14 exhausts the gas in the chamber 12, and reduces the pressurein the chamber 12 to for example 1.33×10⁻³ Pa (10⁻⁵ Torr). Thealternator 28 sets the temperature of the susceptor 21 to a temperatureadequate for the attachment of NH₃, for example 300° C., by changing thefrequency and power of the electric power that is to be applied to theinduction coil 27 (Time T2 to T3).

By this, the TiCl₄ molecular layers that are attached to the surface ofthe wafer W, scatters leaving a first layer of molecular layers,according to the difference of the attachment energy that the molecularlayer of the first layer has and the attachment energy that themolecular layers of the layers after the second layer have. As a result,a situation where one layer of TiCl₄ molecular layer is attached to thesurface of the wafer W is gained.

Next, the processing gas providing device 29 provides NH₃ gas to theinterior of the chamber 12 for a short time, for example, a few seconds,concretely, for 5 to 10 seconds. The exhaust device 14 exhausts the gasin the chamber 12, and sets the pressure in the chamber 12 to forexample 133 Pa (1 Torr). Here, if necessary, the NH₃ gas may be fedtogether with carrier gas. The TiCl₄ molecules on the surface of thewafer W, and the NH₃ gas react, and one layer of TiN molecular layer isformed. At this time, many layers of NH₃ molecular layers are attachedto the formed TiN molecular layer (Time T3 to T4).

Next, to purge NH₃ gas, the processing gas providing device 29 providesAr gas to the interior of the chamber 12. Then, the exhaust device 14exhausts the gas in the chamber 12, and reduces the pressure in thechamber 12 to approximately 1.33×10⁻³ Pa. The alternator 28 rises thetemperature of the susceptor 21 to 450° C., by changing the frequencyand power of the electric power that is to be applied to the inductioncoil 27. By this, the NH₃ molecular layers of the second layer and moreare eliminated, i.e. excluding the NH₃ molecular layer of the firstlayer that is attached to the TiN molecular layer (Time T4 to T5).

After purging, the processing gas providing device 29 feeds TiCl₄ gas tothe interior of the chamber 12 for a few seconds (for example 5 to 10seconds). By this, the NH₃ molecules that are left on the TiN molecularlayer reacts to the TiCl₄ gas, and a layer of TiN molecular layer isformed. At this time, many layers of TiCl₄ molecular layers are attachedto the formed TiN molecular layer. At this point, two layers of TiNmolecular layers are formed on the surface of the wafer W (Time T5 toT6).

Subsequently, the processing device 11 repeats the same operation of theabove, namely, provides each gas, and purges, a predetermined times. Bythis, the TiN molecular layer is stacked layer by layer, and a TiN filmwith the requested thickness can be gained. The processing device 11repeats the operation of the above for example a hundred to severalhundreds of times.

After film forming processing, the carrier mechanism 18 transfers thewafer W out of the chamber 12 to the carrier chamber 17. The processingis thus ended.

In the above ALD method, changing of atmosphere in the chamber 12 iscarried out many times. Consequently, exhaustion efficiency of thechamber 12 effects the throughput greatly. However, because the aboveprocessing device 11 heats the resistive layer 25 by induction heating,it is not necessary to provide a hole for wiring in the chamber 12.Therefore, it is not necessary to apply a sealing member that isnecessary for sealing. Consequently, it is not necessary to providespace for heat liberation in the chamber 12, and a suceptor 21 with ahigh temperature can be provided close to the wall surface of thechamber 12. By this, a chamber 12 with a small capacity can be realized.As a result, high exhaustion efficiency and high throughput can berealized.

Additionally, in the above ALD method, the rise and fall of temperatureof the wafer W is frequently repeated. In a case where induction heatingis applied, because there isn't a hollow shaft, etc., for bringing inthe wiring, the entire heat capacity including the susceptor 21 issmall. Therefore, the temperature change of the susceptor 21 and thewafer W shows a good response. By this, reaction for film forming can becontrolled more precisely, and a precise film forming can be possible.Furthermore, a high throughput can be gained.

As described above, in a case where the resistive layer 25 is heated byinduction heating, a chamber 12 that has a simple structure and smallcapacity can be realized. As a result, a high exhaustion efficiency canbe gained, and a high throughput can be gained especially in the ALDmethod where change of atmosphere is carried out many times.

Additionally, by not applying a hollow shaft, etc., for bringing in thewirings, the whole heat capacity is small, and the heating/cooling ofthe wafer W can be carried out accurately. Furthermore, a suscpetor 21that comprises a stacking structure can be manufactured relativelyeasily. Moreover, induction heating has high efficiency of convertingelectric power to heat, and processing can be possible with a low cost.

Here, the result of a heat-resistance test of the resistive layer 25will be shown. The heat-resistance test was conducted by forming aresistive layer 25 of tungsten, etc., on one side of an aluminum nitrideplate that has a thickness of 1 mm to 5 mm, and heating the layer to450° C. Resultantly, the maximum warp amount of the resistive layer 25was less or equal to 10 micrometers. From this result, it can be seenthat a structure, stacking the resistive layer 25 on an insulator(ceramic), has a high heat resistance.

In the processing device 11 of the above first embodiment, a gap inbetween the chamber 12 and the susceptor 21 may be formed to raise theheat insulation between the chamber 12 and the susceptor 21.Furthermore, a gas flow path for flowing inactive gas to the gap may beformed.

To heighten the heat conductance between the wafer W and the susceptor21, heat conductance gas made of inactive gas, may be flowed between thewafer W and the susceptor 21.

(Second Embodiment)

Below, the processing device 11 according to the second embodiment willbe described with reference to the drawings.

FIG. 3 shows the structure of the processing device 11 according to thesecond embodiment. To make understanding easier, the same referencenumbers as FIG. 1 are placed to the reference numbers in FIG. 3 for thesame parts, and descriptions for the overlapping parts will be omitted.

In the second embodiment, the same susceptor 21 as the first embodiment,can be transported. Namely, the wafer W is for example, placed on thesusceptor 21 in the carrier chamber 17, and transferred to the interiorof the chamber 12 together with the susceptor 21.

Here, the wafer W is placed on the susceptor 21, or is lifted by thesusceptor 21, by a carrier mechanism 18 that comprises a Bernoullichuck.

As shown in FIG. 3, a virgate support member 30 having a predeterminedlength, is provided to the stage portion 12 a of the chamber 12. Thesupport member 30 is plurally placed, for example three are placed, andare placed to support the susceptor 21 where the wafer W is placed. Thecarrier mechanism 18 is inserted in a space between the susceptor 21 andthe chamber 12, formed by the support members 30, and places thesusceptor 21 on the support members 30, or lifts the suscpetor 21 fromthe supporting members 30.

On the outside of the chamber 12, in the same way as the firstembodiment, the induction coil 27 is placed next to the stage portion 12a. When a current passes through the induction coil 27, a magnetic fieldis formed around the induction coil 27. Even if the susceptor 21 is notfixed to the chamber 12, the resistive layer 25 of the susceptor 21 isheated by the formed magnetic field, in the same way as the firstembodiment. In other words, even if the susceptor 12 is not fixed in thechamber 12, the resistive layer 25 of the susceptor 21 is heated byinduction heating.

By the susceptor 21 being transferable, it is not necessary to providetransfer mechanism such as a lift pin, etc., to the chamber 12.Therefore, because a lift pin hole 23 is not provided to the chamber 12,the structure of the chamber 12 becomes more simple.

In the first and second embodiment, the processing device 11 of a singlewafer system is shown as an example. However, the present invention mayalso be applied to a processing device of a batch system, where aplurality of wafers W are processed at the same time.

In this case, the same susceptor 21 as the second embodiment thereof,are plurally provided. In the chamber 12, for example, as shown in FIG.4, a wafer boat 32 of the same kind that is applied in an ordinaryprocessing device of a batch system is provided. The carrier mechanism18 sets the suceptors 21, in which the wafers W are placed, to the waferboat 32, which is in the chamber 12. The induction coil 27 is placedsurrounding the plurality of wafers W and susceptors 21. By this, theplurality of susceptors 21 are heated by induction heating, and aplurality of wafers W can be easily heated.

The induction coil 27 indicated in the first and second embodiment, asshown in FIG. 5, may be placed above and below the susceptor 21.Furthermore, as shown in FIG. 6, the induction coil 27 may be placed sothat it surrounds the susceptor 21 vertically, or as shown in FIG. 7,may be placed so that it surrounds the susceptor 21 horizontally.

In the first and second embodiment, the heat insulation layer 26 isplaced directly on top of the resistive layer 25. However, as shown inFIG. 8A, the resistive layer 25 may be coated by a reflection film 31constituted by material that reflects radiation heat (for examplealuminum or gold, etc.), and the resistive layer 25 may be placedthereon. By doing so, the radiation heat from the resistive layer 25 isreflected by the reflection film 31, and radiation to the back side ofthe susceptor 21 is more repressed. By this, over heating of the chamber12 is prevented, and heating efficiency can be raised. If the processingtemperature is 400° C. or less, aluminum may be suitably applied.

The reflection film 31 may be placed anywhere as long as it is betweenthe resistive layer 25 and the chamber 12. For example, as shown in FIG.8B, the reflection film 31 may be formed on the surface of the stageportion 12 a, where the susceptor 21 is placed. Or, as shown in FIG. 8C,the reflection film 31 may be formed covering the side part of thesusceptor 21.

Furthermore, the side part of the suceptor 21 may be covered byinsulating material, such as aluminum nitride.

The bottom part of the chamber 12, which is shown in the first andsecond embodiment, may be flat, as shown in FIG. 9, if it is possible toplace the induction coil 27. By doing so, the capacity of the chamber 12can be made more smaller.

In the first and second embodiment, for example as shown in FIG. 10, ashowerhead 33 may be placed instead of the nozzle 19, and the exhaustpipe may be placed at the same height as the wafer W placed on thesusceptor 21. The height that is the same as the wafer W, is for examplea height, in between the height where the lower end of the exhaust pipe13 is equal to the surface of the wafer W and the height where the upperend of the exhaust pipe 13 is equal to the surface of the wafer W.

In the first and second embodiment, a plurality of exhaust pipes 13, forexample as shown in the plane view of FIG. 11, may be provided.

The structure of the processing device 11 indicated above may be appliedby being combined. For example, the exhaust pipe 13 shown in FIG. 10 maybe plurally provided, as indicated in FIG. 11.

In the above, a case where a TiN film is formed on the wafer W byapplying TiCl₄ and NH₃ in the ALD method, is described as an example.However, the kind of gas and film are not limited to these. The presentinvention can be applied to another film forming device, etching device,heat processing device, etc., or any kind of processing device, as longas it is a processing device that maintains the target for processing ata predetermined temperature, and carries out processing. The target forprocessing is not limited to a semiconductor wafer, and may besubstrates, etc., applied in liquid crystal displays.

The present invention is based on the Japanese Patent Application No.2002-113414, filed with the Japan Patent Office on Apr. 16, 2002, andincluding specification, claims, drawings and summary. The disclosure ofthe above Japanese Patent Application is incorporated herein byreference in its entirety.

INDUSTRIAL APPLICABILITY

The present invention is applicable in the industrial field that appliesprocessing devices, which heats targets for processing, such assemiconductor wafers, etc.

1. A processing device comprising: a chamber in the interior of which apredetermined processing of a target is carried out; a placing memberdisposed in said chamber on which said target is placed thereon; aninduction coil provided on the outside of said chamber; and a powersource that forms a magnetic field around the induction coil by passinga current through said induction coil; wherein said placing member has aresistive layer that is heated by induction heating caused by themagnetic field formed around said induction coil and heats said target.2. The processing device according to claim 1, further comprising areflection film provided on an inner surface of said chamber whereinsaid reflection film reflects radiation heat from said resistive layer.3. The processing device according to claim 1, wherein said placingmember further comprises a heat insulation layer that is stacked on saidresistive layer and prevents diffusion of heat generated by saidresistive layer.
 4. The processing device according to claim 3, whereinsaid placing member further comprises a reflection film provided on saidresistive layer wherein said reflection film reflects radiation heatfrom said resistive layer.
 5. The processing device according to claim4, wherein said reflection film is provided between said resistive layerand said heat insulation layer.
 6. The processing device according toclaim 4, wherein said reflection film is provided on a side face of saidresistive layer.
 7. The processing device according to claim 3, furthercomprising a flow path for a cooling medium that absorbs heat from saidplacing member disposed between said induction coil and said placingmember.
 8. The processing device according to claim 7, wherein saidplacing member further comprises an insulation layer that is stacked onsaid resistive layer and constitutes a surface for placing said target.9. The processing device according to claim 8, further comprising afixing member that fixes said placing member to the interior of saidchamber.
 10. The processing device according to claim 9, furthercomprising a gas providing device that provides a plurality of kinds ofgas in a predetermined order to the interior of said chamber.
 11. Theprocessing device according to claim 1, further comprising a carrierchamber connected to said chamber, wherein said carrier chambercomprises a carrier mechanism that transfers said placing member to theinterior of the chamber.
 12. The processing device according to claim11, further comprising a support member that supports said placingmember apart from an inner surface of said chamber.
 13. A processingdevice comprising: a chamber in the interior of which a predeterminedprocessing of a target for processing (W) is carried out; a retainingmember disposed in said chamber to retain a plurality of placing membersin which said targets are placed; a carrier mechanism that transferssaid plurality of placing members and sets them at said retainingmember; an induction coil provided on the outside of said chamber; and apower source that forms a magnetic field around the induction coil bypassing a current through said induction coil; wherein each of saidplurality of placing members has a resistive layer that is heated byinduction heating caused by the magnetic field formed around saidinduction coil and heats said target.
 14. A placing member comprising aninsulation layer and a resistive layer that is stacked on saidinsulation layer and heated by induction heating to heat a target placedon said insulation.
 15. The placing member according to claim 14,wherein said resistive layer is formed by melting and sprayingconductive material on said insulation layer.
 16. The placing memberaccording to claim 15, further comprising a heat insulation layer thatis stacked on a surface, opposite to a surface that contacts theinsulation layer of the resistive layer and prevents diffusion of heat,generated by said resistive layer.
 17. The placing member according toclaim 16, further comprising a reflection film that is placed on saidresistive layer and reflects radiation heat from the resistive layer.18. A processing method for processing of a target that is placed in theinterior of a chamber, said method comprising: placing said target onone surface of an insulation layer that is placed in said chamber,wherein a resistive layer is stacked on the other surface of theinsulation layer; heating said resistive layer, which is in the chamberby induction heating that occurs by passing a current through aninduction coil that is provided outside of said chamber thereby heatingsaid target which is placed on said insulation layer.
 19. The processingmethod according to claim 18, further comprising alternately providing aplurality of kinds of gas to the interior of said chamber.
 20. Theprocessing method according to claim 19, further comprising changing atemperature of said target by changing the amplitude of the current thatis passed through said induction coil.